IGZO (Indium Gallium Zinc Oxide) is a revolutionary material enabling high-performance, low-power AI chips. Our chips deliver greater efficiency and smaller form factors than traditional silicon-based designs.
Feature
IGZO-Based Chips
Traditional Silicon
Power Efficiency
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Heat Dissipation
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Edge Performance
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Miniaturization
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Small. Smart. Scalable.
IGZO-FET based core logic.
Ultra-low standby power <10 µW.
2x faster inference vs standard microcontrollers.
Designed for wearables, IoT, and smart devices.
Wearables :
IoT Devices :
Healthcare :
Robotics :
Smart Cameras :
We’re Rapid Silicon Design Corporation—a fast-moving startup in Japan building the next generation of AI computing. Our secret weapon? IGZO (Indium Gallium Zinc Oxide) technology, a game-changer for making AI chips faster, more efficient, and way less power-hungry.
Right now, AI demands insane amounts of computing power, and traditional silicon is hitting its limits. That’s where we come in. IGZO lets us push past those barriers, unlocking new possibilities for AI hardware. Think smarter devices, lower energy bills, and performance that blows past today’s standards.
As a scrappy, ambitious startup, we’re all about speed—not just in our chips, but in how we innovate. Japan’s got deep roots in semiconductor excellence, and we’re tapping into that legacy to build something big. The future of AI needs fresh ideas, and we’re here to deliver.
AI’s next leap starts with us. Let’s go.
Founded in 2025
First prototype coming soon
Partnerships with leading foundries and universities
We’re hiring innovators who are passionate about building next-gen AI systems. Current openings:
IC Design Engineer – AI Accelerators
Embedded Systems Engineer
Materials Scientist – IGZO Processing
東京都千代田区内神田3-16-5 旭町米山ビル6階
Kouichi Arakawa 荒川 康一 GM Kouichi Arakawa <Kouichi@rapidsilicon.jp>
電話番号:03-3526-2355 FAX:03-3526-2578